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Tektronix TDS2014B Security Instructions

Tektronix TDS2014B
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Memory devices
Volatile memory devices
The volatile memory devices for the TBS1000B and TBS1000B-EDU products
are listed in the Volatile memory devices (TBS1000B & TBS1000B-EDU) on
page 3 section.
SDRAM 512 K
Type and size 512 K X 32
Function Acquisition memory for holding and processing waveforms, and processor system RAM
Type of user information
stored
Both user data and user settings
Backed up by battery? No
Method of modification Indirect
Data input method Firmware operations, user input
Location Main Acquisition board
User accessible No
To clear Remove power from the instrument for at least 20 seconds.
Process to sanitize Remove power from the instrument for at least 20 seconds.
SRAM 128 K
Type and size SRAM, 128 K X 8
Function Shared memory between the acquisition system and the USB processor
Type of user information
stored
Both user data and user settings
Backed up by battery? No
Method of modification Indirect
Data input method Firmware operations
Location Main Acquisition board. TBS and TDS models only.
User accessible No
To clear Remove power from the instrument for at least 20 seconds.
Process to sanitize Remove power from the instrument for at least 20 seconds.
Real-time clock
Type and size Real-time clock, which contains battery backed-up memory
Function Holds date/time data
Type of user information
stored
None
Backed up by battery? Yes
Method of modification Indirect
Declassification and Security Instructions 1

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Tektronix TDS2014B Specifications

General IconGeneral
BrandTektronix
ModelTDS2014B
CategoryTest Equipment
LanguageEnglish

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