Sharp LC-19LE510E User Manual

65
LC-19LE510
LC-22LE510
LC-24LE510
21. FDC642
21.1. General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild’s advanced PowerTrench®
process that
has been especially tailored to minimize on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for
applications where the larger packages are impractical.
21.2. Features
 Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
 Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
 Fast switching speed
 Low gate charge (11nC typical)
 High performance trench technology for extremely low rDS(on)
 SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1
mm thick)
 Termination is Lead-free and RoHS Compliant
21.3. Pinning
20.3
20.2
20.1
20.

Sharp LC-19LE510E Specifications

General

Brand	Sharp
Model	LC-19LE510E
Category	LED TV
Language	English