In this section:
Introduction .............................................................................. 6-1
Equipment required .................................................................. 6-2
Set up remote communications ................................................ 6-2
Set up external hardware triggers ............................................ 6-3
Device connections .................................................................. 6-5
Remote control of FET testing using SCPI commands ............ 6-8
Remote control of FET testing using TSP commands ............ 6-13
Introduction
This example application uses one or two 2470 instruments to perform I-V characterization of
field-effect transistors (FETs). The high-voltage capabilities and extremely sensitive current
measurement ranges of the 2470 make it especially suited to wide band-gap semiconductor devices.
The FET for these examples could be a traditional silicon-based MOSFET or gallium nitride (GaN) or
silicon carbide (SiC) based.
This application consists of examples that demonstrate:
• How to use a 2470 to perform a drain leakage current measurement on a FET
• How to use two 2470s to find the subthreshold swing of a FET
• How to use two 2470s to perform a drain family of curves (V
DS
-I
D
) on a three-terminal FET
Determining the I-V parameters of FETs helps you ensure that they function properly in their intended
applications and that they meet specifications. There are many I-V tests that you can perform with the
2470, including drain or gate leakage, breakdown voltage, threshold voltage, subthreshold swing, and
drain current. The number of 2470 instruments required for testing depends on the number of FET
terminals that must be biased, swept, and measured.
Section 6
Measure I-V characteristics of FETs
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