Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-44 S530-907-01 Rev. A / September 2015
Example
result = idss(d, g, s, sub, vdss, idlim, f, &idsat, &vdsat)
Schematic
iebo
This subroutine measures the reverse-bias leakage current through the emitter-base diode of a bipolar transistor
with the base grounded and collector terminal floating.
Usage
double iebo(int e, int b, int c, int s, double vebo, double vsub)
The emitter pin of the device
The base pin of the device
The collector pin of the device
The substrate pin of the device
Emitter-base voltage, in volts
Reverse-bias leakage current:
+4.0E+21 = Current limit reached, measured current is within
98 % of the 1 mA limit
Details
If a zero or negative substrate pin is specified, the substrate is left floating. If the pin number is
greater than 0 and V
SUB
is less than 0.9 mV, the substrate is grounded. In all other cases, it is
connected and forced.
V/I polarities
NPN +V
EB
and -V
SUB
PNP -V
EB
and -V
SUB
Source-measure units (SMUs)
SMU1: Forces vebo, 1 mA current limit, measures leakage current
SMU2: Forces vsub, default current limit