Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-70 S530-907-01 Rev. A / September 2015
Example
vp1(d, g, s, sub, ids, vdlim, vg1, vg2, iglim, &iflag, &vp)
Schematic
vt14
This subroutine estimates the extrapolated threshold voltage (V
T
) of a metal-oxide field-effect transistor
(MOSFET) using a simple two-point technique.
Usage
double vt14(int d, int g, int s, int sub, double vlow, double vhigh, double vds,
double vbs, double ithr, double niter)
The drain pin of the device
The gate pin of the device
The source pin of the device
The substrate pin of the device
The start of the gate-source voltage (V
GS
) binary search, in volts
The end of the V
GS
binary search, in volts
The forced drain voltage, in volts
The targeted drain current (I
DS
), in amperes
The number of iterations in the search
The extrapolated threshold voltage
Details
This subroutine does a binary search on V
GS
to locate the target threshold current using the vtati
subroutine. This current is I
D1
. I
D4
is then calculated as 4 * I
D1
. A binary search is done again on V
GS
to
find I
D4
. A linear least-squares (LLSQ) line is fit between these two points, and the V
T
parameter is
estimated.
A typical value for niter is 10 iterations. If niter is less than 2, a value of 2 is used. If it is greater
than 16, a value of 16 is used.