Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-78 S530-907-01 Rev. A / September 2015
vtext3
This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor
(MOSFET) using a condensed version of the vtext and vtext2 subroutine method.
Usage
void vtext3(int d, int g, int s, int sub, double vg1, double vg2, double vds,
double vbs, int npts, double *slope, double *vt, int *flag);
The drain pin of the device
The gate pin of the device
The source pin of the device
The substrate pin of the device
Start of the gate-source voltage (V
GS
) search, in volts
End of the V
GS
search, in volts
The number of points in the sweep
The calculated inductance
0 = Normal operation
1 = Bad data collected
2 = Calculated linear least-squares (LLSQ) slope = 0.0, bad data
The extrapolated gate-source voltage
Details
This subroutine is the most condensed form of the basic maximum slope techniques to find threshold
voltage (V
T
).
This subroutine does the following to estimate V
T
:
1. Sweeps a drain-source current (I
DS
), gate-source voltage (V
GS
) array (using the idvsvg
subroutine).
2. Differentiates the data set using dy/dx notation (also known as Leibniz's notation).
3. Finds the maximum slope.
4. Finds the index of the maximum slope in the slope array.
5. Returns the gate-source voltage (V
GS
) intercept and slope.
V/I polarities
N-channel +V
DS
, +V
G
, -V
BS
P-channel -V
DS
, -V
G
, -V
BS