HP
5384A
and
HP 5385A
Replaceable
Parts
A
=assembly
AT = attenuator; Isolator;
termination
B = fan:
motor
BT
=battery
C = capacitor
CP
=coupler
CR
=diode;
diode
thyristor:
varactor
DC
=directional
coupler
A
=ampere
ac
= alternating current
ACCESS
=acceSsory
ADJ
= adjustment
AID
= analog-to-digital
AF
= audio frequency
AFC
=automatic
frequency control
AGC
= automatic gain control
AL
=aluminum
ALC
= automatic level control
AM
= amplitude modulation
AMPL
=amplifier
APC
=automatic
phase control
ASSY
=assembly
AUX
=auxiliary
AVG
=average
AWG
=american
wire gauge
BAL
=balance
BCD
= binary coded decimal
80
=board
BECU
=beryllium
copper
BFO
= beat frequency oscillator
BH
= binder head
BKDN
=breakdown
BP
=bandpass
BPF
= bandpass
filter
BAS
=brass
BWO
= backward-wave oscillator
CAL
=calibrate
ccw
= counterclockwise
CER
=ceramic
CHAN
=channel
em
= centimeter
CMO
=coaxial
COEF
= coefficient
COM
=common
COMP
= composition
COMPL
=complete
CONN
=connector
CP
= cadmium plate
CRT
= cathode-ray tube
CTL
= complementary transistor logic
cw
= continuous wave
cw
=clockwise
0/A
= digital-to-analog
dB
=decibel
dBm
=decibel
referred to 1 mW
de
= direct current
deg
=degree
(temperature
Interval
or
difference)
0
= degree (plane angle)
~·c
=degree
Celsius (centrigrade)
•F
= degree Fahrenheit
•K
=degree
Kelvin
OEPC
= deposited carbon
OET
=detector
diam
=diameter
DIA
=diameter
(used in parts list)
DIFF
AMPL= differential amplifier
div
=division
OPDT
= double-pole, double-throw
DR
=drive
DSB
= double sideband
DTL
=diode
transistor logic
DVM
=digital
voltmeter
ECL
= emitter coupled logic
EMF
= electromotive force
EDP
= electronic data processing
ELECT
= electrolytic
EN
CAP
= encapsulated
EXT
=external
F
=farad
FET
= field-effect transistor
F/F
=flip-flop
FH
=flat
head
FOL H
= fillister head
FM
= frequency modulation
FP
= front panel
FREa
=frequency
FXD
=fixed
g
=gram
GE
=germanium
GHz
=gigahertz
GL
=glass
GND
= ground(ed)
H
=henry
h
=hour
HET
= heterodyne
HEX
=hexagonal
6-2
Table
6-1-
Abbreviations
and
Reference Designations
REFERENCE DESIGNATIONS
DL
DS
E
F
FL
H
HY
J
=delay
line
=annunciator;
signaling device
(audible or visual); tamp; LED
=miscellaneous electrical part
=fuse
=filter
=hardware
=circulator
=electrical
connector (stationary
portionl;
jack
K
=relay
L = coil;
inductor
M
=metre
MP = miscellaneous mechanical part
P
=electrical
connector (movable
portion);
plug
a = transistor; SCR; triode thyristor
R
=resistor
AT = thermistor
S
=switch
ABBREVIATIONS
HD
=head
NE
=neon
HOW
=hardware
NEG
=negative
HF
= high frequency
nF
= nanofarad
HG
=mercury
NIPL
= nickel plate
HI
=high
N/0
= normally open
HP
= Hewlett-Packard
NOM
=nominal
HPF
=high
pass filter
NORM
=normal
HR
=hour
(used in parts list) NPN = negative-positive-negative
HV
= high voltage NPO
= negative-positive zero (zero
Hz
=hertz
temperature coefficient)
IC
= integrated
circuit
NRFR
= not recommended for field
ID
= inside diameter replacement
IF
= intermediate frequency
ns
= nanosecond
IMPG
= impregnated NSR
=
not
separately replaceable
in
=inch
nW
= nanowatt
I NCO
= incandescent
080
=
order
by
description
INCL
= include(s)
00
= outside diameter
INP
=input
OH
=oval
head
INS
= insulation
OPAMPL
= operational amplifier
INT
=internal
OPT
=option
kg
=kilogram
osc
=oscillator
kHz
=kilohertz
ox
=oxide
kO
=kilohm
oz
=ounce
kV
=kilovolt
n
=ohm
lb
=pound
p
=peak
(used in parts list)
LC
= inductance-capacitance
PAM
= pulse-amplitude modulation
LED
= light-emitting diode
PC
= printed circuit
LF
=
low
frequency
PCM
=pulse-code
modulation;
LG
=long
pulse-count modulation
LH
=left
hand
PDM
=
pulse~uration
modulation
LIM
=limit
pF
=picofarad
LIN
= linear taper (used in parts list)
PH
BRZ
= phosphor bronze
tin
=linear
PHL
=phillips
LKWASH
= lockwasher
PIN
= positive-intrinsic-negative
LO
= low; local oscillator
PIV
= peak inverse voltage
LOG
= logarithmic taper (used pk
=peak
in parts list)
PL
=phase
lock
log
= logarithm(ic)
PLO
= phase lock oscillator
LPF =
low
pass filter
PM
= phase modulation
LV
= low voltage
PNP = positive-negative-positive
m
= metre {distance)
P/0
=part
of
mA
=milliampere
POLY = polystyrene
MAX
=maximum
PORC
=porcelain
MO
=megohm
POS
= positive; position(s) (used in
MEG
=meg
(108) (used in parts list)
parts list)
MET FLM
=metal
film POSN
=position
MET OX
= metal oxide POT = potentiometer
MF
= medium frequency; microfarad p-p
= peak-to-peak
(used in parts list)
PP
=peak-to-peak
(used
In
parts list)
MFA
= manufacturer
PPM
= pulse-position modulation
mg
=milligram
PREAMPL = preamplifier
MHZ
=megahertz
PRF
= pulse-repetition frequency
mH
=millihenry
PAR
= pulse repetition rate
mho = conductance
ps
= picosecond
MIN
=minimum
PT
=point
mip
=minute
(time)
PTM
= pulse-time modulation
=minute
(plane angle)
PWM
=pulse-width
modulation
MINAT
=miniature
PWV
= peak working voltage
mm
=millimetre
RC
= resistance capacitance
MOD
=modulator
RECT
=rectifier
MOM
=momentary
REF
=reference
MOS
= metal-oxide semiconductor
REG
=regulated
ms = millisecond REPL = replaceable
MTG
=mounting
RF
= radio frequency
MTR
=meter
(indicating device)
RFI
= radio frequency interference
mV
=millivolt
RH
= round head; right hand
T
TB
TC
TP
u
v
VA
w
X
y
z
mVac
= millivolt, ac
RLC
=resistance-inductance-capacitance
mVdc
= millivolt, de
RMO = rack mount
only
mVpk
= millivolt, peak
rms
= root-mean-square
mVp-p = millivolt, peak-to-peak
RND
=round
mVrms
= millivolt, rms
ROM = read-only memory
mW
=milliwatt
R&P = rack and panel
MUX
=multiplex
RWV
=reverse
working voltage
MY
=mylar
s
= scattering parameter
~A
= microampere
=second
(time)
~F
= microfarad
=second
(plane angle)
~H
= microhenry
s:e
=slow-blow
fuse (used in parts list)
"'mho
=
micromho
SCR
=silicon
controlled rectifier; screw
~s
= microsecond
SE
=selenium
~v
=microvolt
SECT
=sections
"'Vac
= microvolt, ac SEMICON = semiconductor
~Vdc
= microvolt, de SHF = superhlgh frequency
~Vpk
= microvolt, peak Sl
=silicon
~Vp-p
=microvolt,
peak-to-peak SIL
=silver
JJVrms
= microvolt, rms SL
=slide
~w
= microwatt
SNR
= signal-to-noise ratio
nA = nanoampere
SPOT
= single-pole,
double-throw
NC =
no
connection
SPG
=spring
N/C
= normally closed
SR
=split
ring
= transformer
= terminal board
= thermocouple
=test
point
=integrated
circuit; microcircuit
= electron tube
= voltage regulator; breakdown diode
= cable; transmission path; wire
=socket
= crystal unit-piezo-electric
= tuned cavity; tuned circuit
SPST = single·pole, single-throw
sse
= single sideband
SST = stainless steel
STL
=steel
sa
=square
SWR
= standing-wave ratio
SYNC
=synchronize
T
=timed
(slow-blow fuse)
TA
=tantalum
TC
= temperature compensating
TO
=time
delay
TERM
=terminal
TFT
= thin-film transistor
TGL
=toggle
THO
=thread
THRU
=through
Tl
=titanium
TOL
=tolerance
TRIM
=trimmer
TSTR
= transistor
TTL
= transistor-transistor logic
TV
= television
TVI = television interference
TWT
= traveling wave tube
u =
micro
(10-8) used in parts list)
UF
= microfarad (used in parts list)
UHF
=ultrahigh
frequency
UNREG = unregulated
v
=volt
VA = voltampere
Vac
=volts
ac
VAR
=variable
vco
= voltage-controlled oscillator
Vdc
=volts
de
VDCW
=volts,
de,
working
(used in
parts
list)
V(F)
= volts, filtered
VFO = variable-frequency oscillator
VHF
= very-high frequency
Vpk
=volts
peak
Vp-p
= volts peak-to-peak
Vrms
=volts
rms
VSWR
= voltage standing wave ratio
VTO
=voltage-tuned
oscillator
VTVM = vacuum-tube voltmeter
VI
XI
= volts, switched
w
=watt
WI
=with
WIV
=working
inverse voltage
ww
= wirewound
W/0
=without
YIG
= yttrium-iron-garnet
Zo
= characteristic impedance
NOTE
All abbreviations in the parts list will
be in upper case.
MULTIPLIERS
Abbreviation
p,.fl.
Multiple
T tara
1012
G
giga
109
M
mega
106
k kilo
103
da
deka
10
d
deci
10-1
centi
10-2
m milli
1Q-3
~
micro
10-6
n
nano
10-9
p pi co
1Q-12
I femto
10-15
atto
10-18
•
•
•