Electrical Specifications
FLASH Memory Characteristics
MC68HC908AB32 — Rev. 1.0 Technical Data
MOTOROLA Electrical Specifications 385
23.13 FLASH Memory Characteristics
Characteristic Symbol Min Max Unit
FLASH program bus clock frequency — 1 — MHz
FLASH read bus clock frequency
f
Read
(1)
Notes:
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
32k 8.4M Hz
FLASH page erase time
t
Erase
(2)
2. If the page erase time is longer than t
Erase
(Min), there is no erase-disturb, but it reduces the endurance of the
FLASH memory.
1—ms
FLASH mass erase time
t
MErase
(3)
3. If the mass erase time is longer than t
MErase
(Min), there is no erase-disturb, but it reduces the endurance of
the FLASH memory.
4—ms
FLASH PGM/ERASE to HVEN set up time
t
nvs
10 — µs
FLASH high-voltage hold time
t
nvh
5—µs
FLASH high-voltage hold time (mass erase)
t
nvhl
100 — µs
FLASH program hold time
t
pgs
5—µs
FLASH program time
t
PROG
30 40 µs
FLASH return to read time
t
rcv
(4)
4. t
rcv
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
by clearing HVEN to logic 0.
1—µs
FLASH cumulative program hv period
t
HV
(5)
5. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition: t
nvs
+ t
nvh
+ t
pgs
+ (t
PROG
× 64) ≤ t
HV
max.
—4ms
FLASH row erase endurance
(6)
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
— 10,000 — Cycles
FLASH row program endurance
(7)
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
— 10,000 — Cycles
FLASH data retention time
(8)
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
time specified.
— 10 — Years
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