Q-C Method and Simultaneous High-low Frequency C-V
Nicollian, E.H. and Brews, J.R., "Instrumentation and Analog Implementation of the Q-C Method for
MOS Measurements," Solid State Electronics, 27, 953 (1984).
Boulin, D.M., Brews, J.R., and Nicollian, E.H., "Digital implementation of the Q-C Method for MOS
Measurements," Solid State Electronics, 27, 977 (1984).
Derbenwick, G.F., Automated C-V and |Y|-w Curves for MOS Device Analysis, Sandia Report
SAND80-1308 (1982).
Lubzens, D., Kolodny, A., and Shacham-Diamond, Y.J., "Automated Measurement and Analysis of
MIS Interfaces in Narrow-Bandgap Semiconductors," IEEE transactions on Electron Devices, ED-28,
5 (1981).
Ramp Method
Kuhn, M., "A Quasistatic Technique for MOS C-V and Surface State Measurements," Solid State
Electronics, 13, 873 (1970).
Castagne, R., "Détermination de la densité d’états lents d’une capacité métak-isolant semiconducteur
par l’étude de la charge sour une tension croissant line áirement," C.R. Acad. Sci 267, 866 (1968).
Kerr, D.R., "MIS Measurement Technique Utilizating Slow Voltage Ramps," Int. Conf. Properties and
Use of MIS Structures, Grenoble, France, 303 (1969).
Castagne, R., and Vapaille, A., "Description of the SiO2-Si Interface Properties by Means of Very Low
Frequency MOS Capacitance Measurements," Surface Science, 28, 157 (1971).
Kuhn, M. and Nicollian, E.H., "Nonequilibrium Effects in Quasi-static MOS Measurements," J.
Electrochem. Soc., 118, 373 (1971).
Lopez, A.D., "Using the Quasistatic Method for MOS Measurements", Rev. Sci. Instr. 44, 200 (1973).
Interface States / Doping Profiles
Berglund, C.N., "Surface States at Steam Grown Silicon-Silicon Dioxide Interfaces," IEEE Trans.
Electron. Dev., 13, 701 (1966).
DeClerck, G., Characterization of Surface States at the Si-SO2 Interface, Nondestructive Evaluation
of Semiconductor Materials and Devices (J.N. Zemel, ed.), Plenum Press, New York, p. 105 (1979).
Brews, J.R., "Correcting Interface-State Errors in MOS Doping Profile Determinations," J. Appl. Phys.
44, 3228 (1973).
Gordon, B.J., "On-Line Capacitance-Voltage Doping Profile Measurement of Low-Dose Ion Implants,"
IEEE Trans. Dev., ED-27, 12 (1980).
VanGelder, W., and Nicollian, E.H., "Silicon Impurity Distribution as Revealed by Pulsed MOS C-V
Measurements," J. Electrochem, Soc. Solid State Science, 118, 1 (1971).
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