RL78/F13, F14 CHAPTER 30 FLASH MEMORY
R01UH0368EJ0210 Rev.2.10 1645
Dec 10, 2015
30.8 Data Flash
30.8.1 Data flash overview
An overview of the data flash memory is provided below.
The data flash memory can be rewritten by a user program using the data flash library. For details, refer to the RL78
Family Microcontroller Data Flash Library User’s Manual.
The data flash memory can also be rewritten by serial programming using a dedicated flash memory programmer or
an external device.
Blocks in the data flash memory can be erased in 1-KB units.
The data flash memory can be accessed only in 8-bit units.
The data flash memory can be directly read by CPU instructions.
Instructions can be executed from the code flash memory while rewriting the data flash memory (back ground operation
(BGO) is supported).
Because the data flash memory is an area exclusively used for data, executing instructions from the data flash memory
is prohibited.
Accessing the data flash memory is prohibited while rewriting the code flash memory (during self-programming)
Manipulating the DFLCTL register is prohibited while rewriting the data flash memory.
Transition to the STOP status is prohibited while rewriting the data flash memory.
The data flash memory can be programmed by using a Renesas library while other programs are running.
Cautions 1. The data flash memory is stopped after a reset is released. To use the data flash memory, the data
flash control register (DFLCTL) must be set up.
2. The high-speed on-chip oscillator must be running while rewriting the data flash memory. If this
oscillator is stopped, start the high-speed on-chip oscillator clock by setting HIOSTOP to 0. Then,
after 30
s has elapsed, execute the data flash library.
Remark For details about rewriting the code flash memory by using a user program, see 30.6 Self-Programming.
To Next Page
Loading...
Need help?
General
