RL78/F13, F14 CHAPTER 30 FLASH MEMORY
R01UH0368EJ0210 Rev.2.10 1638
Dec 10, 2015
30.6 Self-Programming
The RL78/F13 and RL78/F14 support self-programming functions that can be used to rewrite the code flash memory via
a user program. Because this function allows a user application to rewrite the code flash memory by using the flash self-
programming library, it can be used to upgrade the program in the field.
Cautions 1. The self-programming function cannot be used when the CPU operates with the subsystem/low-
speed on-chip oscillator select clock.
2. To prohibit an interrupt during self-programming, in the same way as in the normal operation
mode, execute the flash self-programming library in the state where the IE flag is cleared (0) by
the DI instruction. To enable an interrupt, clear (0) the interrupt mask flag to accept in the state
where the IE flag is set (1) by the EI instruction, and then execute the flash self-programming
library.
3. The high-speed on-chip oscillator should be kept operating during self-programming. If this
oscillator is stopped, start the high-speed on-chip oscillator clock by setting HIOSTOP to 0. Then,
after 30
s has elapsed, execute the flash self-programming library.
Remarks 1. For details of the self-programming function, refer to RL78 Microcontroller Flash Self Programming
Library Type01 User’s Manual (R01AN0350).
2. For details of the time required to execute self programming, see the notes on use that accompany the
flash self-programming library tool.
Note that the self-programming function has two modes for flash memory programming mode: wide voltage mode and
full-speed mode. Because RL78/F13 and RL78/F14 do not have wide voltage mode, select full-speed mode.
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