RL78/F13, F14 CHAPTER 35 ELECTRICAL SPECIFICATIONS (GRADE K)
R01UH0368EJ0210 Rev.2.10 1780
Dec 10, 2015
35.9 Flash Memory Programming Characteristics
(TA = -40 to +125C, 2.7 V EVDD0 = EVDD1 = VDD 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency fCLK 1 24 MHz
Number of code flash rewrites
Notes 1, 2, 3
Cerwr Retained for 20 years (after rewrite)
T
A = +85C
Note 4
1,000 Times
Number of data flash rewrites
Notes 1, 2, 3
Retained for 20 years (after rewrite)
T
A = +85C
Note 4
10,000
Retained for 5 years (after rewrite)
T
A = +85C
Note 4
100,000
Erase time Terasa Block erase 5 ms
Write time Twrwa 1 word write 10
µs
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics Corporation.
4. The specified data retention time is given under the condition that the average temperature (T
A) is 85°C or
below.
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