RL78/G13 CHAPTER 29 ELECTRICAL SPECIFICATIONS
R01UH0146EJ0100 Rev.1.00 1040
Sep 22, 2011
Caution The pins mounted depend on the product. Refer to 2.1.1 20-pin products to 2.1.14 128-pin products,
and 2.1.15 Pins for each product (pins other than port pins).
29.8 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(TA = −40 to +85°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.47
Note
5.5 V
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is effected, but data is not retained when a POR reset is effected.
V
DD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
Data retention mode
V
DDDR
Operation mode
29.9 Flash Memory Programming Characteristics
(TA = −40 to +85°C, 1.8 V ≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
CPU/peripheral hardware clock
frequency
f
CLK 1.8 V ≤ VDD ≤ 5.5 V 1 32 MHz
Number of code flash rewrites
Note 1
Retained for 20 years
(Self/serial
programming)
Note 2
1,000
Retained for 1 years
(Self/serial
programming)
Note 2
1,000,000 Number of data flash rewrites
C
erwr
1 erase + 1 write after
the erase is regarded
as 1 rewrite.
The retaining years
are until next rewrite
after the rewrite.
Retained for 5 years
(Self/serial
programming)
Note 2
100,000
Times
Notes 1. 128-pin products, and flash ROM: 384 to 512 KB of 44- to 100-pin products, these specifications show target
values, which may change after device evaluation.
2. When using flash memory programmer and Renesas Electronics self programming library
Remark When updating data multiple times, use the flash memory as one for updating data.
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