RL78/G1H CHAPTER 31 ELECTRICAL SPECIFICATIONS
R01UH0575EJ0120 Rev. 1.20 Page 907 of 920
Dec 22, 2016
31.8 RAM Data Retention Characteristics
Note The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset
is effected, but RAM data is not retained when a POR reset is effected.
31.9 Flash Memory Programming Characteristics
Note 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite.
Note 2. When using flash memory programmer and Renesas Electronics self-programming library.
Note 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics
Corporation.
31.10 Dedicated Flash Memory Programmer Communication (UART)
(TA = ‒40 to +85 °C, VSS = 0V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage
V
DDDR
1.46
Note
3.6 V
(TA = ‒40 to +85 °C, 1.8 V ≤ VDD ≤ 3.6 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency f
CLK 1.8 V ≤ VDD ≤ 3.6 V 1 32 MHz
Number of code flash rewrites
Notes 1, 2, 3
Cerwr Retained for 20 years TA = 85 °C 1,000 Times
Number of data flash rewrites
Notes 1, 2, 3
Retained for 1 year TA = 25 °C 1,000,000
Retained for 5 years T
A = 85 °C 100,000
Retained for 20 years T
A = 85 °C 10,000
(TA = -40 to +85 °C, 1.8 VDD ≤ 3.6 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During serial programming 115,200 1,000,000 bps
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
Operation mode
VDDDR
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