RL78/G15 CHAPTER 23 ELECTRICAL SPECIFICATIONS (T
A
= −40 to +85°C)
R01UH0959EJ0110 Rev.1.10 Page 729 of 765
Mar 7, 2023
23.8 Flash Memory Programming Characteristics
[T
A
= −40 to +85°C, 2.4 V ≤ V
DD
≤ 5.5 V, V
SS
= 0 V]
Item Symbol Condition MIN. TYP. MAX. Unit
Number of code flash rewrites
Note 1, Note 2
C
erwr
Retained for 20 years T
A
= +85°C 1000 Times
Number of data flash rewrites
Note 1, Note 2
Retained for 1 year T
A
= +25°C 1,000,000 Times
Retained for 5 years T
A
= +85°C 100,000 Times
Retained for 20 years T
A
= +85°C 10,000 Times
Note 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
Note 2. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics.
Code flash/data flash self-programming time
[T
A
= −40 to +85°C, 2.4 V ≤ V
DD
≤ 5.5 V, V
SS
= 0 V]
Item Symbol f
CLK
= 1 MHz f
CLK
= 16 MHz Unit
MIN. TYP. MAX. MIN. TYP. MAX.
Writing (4 bytes) t
P4
104 905 53.8 504.9 µs
Block erasure (1 KB) t
E1K
7.9 262.3 5.5 214.1 ms
Caution The listed values do not include the time until the operations of the flash memory start following
execution of an instruction by software.
23.9 Dedicated Flash Memory Programmer Communication (UART)
[T
A
= −40 to +85°C, 2.4 V ≤ V
DD
≤ 5.5 V, V
SS
= 0 V]
Item Symbol Condition MIN. TYP. MAX. Unit
Transfer rate 115,200 bps
Remark The transfer rate during flash memory programming is fixed to 115,200 bps.
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